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Biased Schottky Diode DetectorsBSD100X
| Features: | • | High Sensitivity | • | Low Output Resistance |
| • | Extremely Wideband | • | Wide Dynamic Range |
• The Biased Schottky Diode Detector is ideal for applications where a pulsed RF signal is required.
| Specifications | |||||
|---|---|---|---|---|---|
| Model | Frequency Range (GHz) | Flatness (± dB) | K Factor mV/mW | TSS (dBm) | Output Capacitance (PF) |
| BSD1001 | 0.1 – 0.5 | 0.5 | 1600 | -52 | 50 |
| BSD1002 | 0.5 – 2.0 | 0.5 | 1600 | -52 | 50 |
| BSD1003 | 2.0 – 4.0 | 0.5 | 1600 | -52 | 20 |
| BSD1004 | 4.0 – 8.0 | 0.6 | 1600 | -52 | 20 |
| BSD1005 | 8.0 – 18.0 | 0.8 | 1200 | -50 | 20 |
| BSD1006 | 1.0 – 18.0 | 1.0 | 1200 | -50 | 20 |
| BSD1007 | 18 – 40.0 | 1.5 | 1000 | -48 | 20 |
• The specifications above are based on a 2MHz bandwidth and a 3 dB Noise Figure Amplifier and a -20 dBm input level @ Bias current of 20 micro Amp.
Ordering information:
• Negative output polarity is standard; add P to the end of the model number for positive output.
• Standard input/output connector is SMA-F.
• Add “A” to the model for input SMA-M, output SMA-F (or K-M input for BSD1007).
• Add “B” to the model for input SMA-F, output SMA-M (or K-F input for BSD1007).
| Maximum Ratings: | ||
|---|---|---|
| Operating Temperature: | -55 °C to +125 °C | |
| Storage Temperature: | -55 °C to +150°C | |
| Shock: | 50 G. 11 msec. | |
| Vibration: | 20 G. 100 to 2000 Hz |